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1

Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology

Anri Nakajima, Quazi D.M Khosru, Takashi Yoshimoto, Shin Yokoyama

Journal:

Microelectronics Reliability

Year:

2002

Language:

english

File:

PDF, 742 KB

english, 2002

2

Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

Zhu, Shiyang, Nakajima, Anri, Ohashi, Takuo, Miyake, Hideharu

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 396 KB

english, 2005

3

Monte Carlo Simulation of the Two-Dimensional Site Percolation Problem for Designing Sensitive and Quantitatively Analyzable Field-Effect Transistors

Kasama, Toshihiro, Nakajima, Anri

Journal:

Japanese Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 505 KB

english, 2009

4

Electroluminescence from Alq 3 -Containing Electron-Beam Resists for Light-Emitting Organic Nanometer-Scale Devices

Nakajima, Anri, Sakurai, Hiroki, Abe, Shuhei

Journal:

ACS Applied Nano Materials

Year:

2020

File:

PDF, 8.30 MB

2020

5

Local-hopping mechanism of an oxygen vacancy in ZrO2 doped with Sc3+ studied by measuring quasielastic light scattering

Anri Nakajima, Mareo Ishigame

Journal:

Solid State Ionics

Year:

2002

Language:

english

File:

PDF, 166 KB

english, 2002

6

Esophageal transit scintigraphy and structured questionnaire in patients with systemic sclerosis with endoscopically proven reflux esophagitis

Kenichi Nakajima, Anri Inaki, Takashi Hiramatsu, Minoru Hasegawa, Manabu Fujimoto, Kazuhiko Takehara, Seigo Kinuya

Journal:

Annals of Nuclear Medicine

Year:

2009

Language:

english

File:

PDF, 680 KB

english, 2009

7

Esophageal transit study using a sliding sum image: application to patients with probable and definite systemic sclerosis

Kenichi Nakajima, Minoru Hasegawa, Anri Inaki, Hiroshi Wakabayashi, Tetsuo Hosoya, Kazuhiko Takehara, Seigo Kinuya

Journal:

Annals of Nuclear Medicine

Year:

2011

Language:

english

File:

PDF, 460 KB

english, 2011

8

Double-phase131I whole body scan and131I SPECT-CT images in patients with differentiated thyroid cancer: their effectiveness for accurate identification

Hiroshi Wakabayashi, Kenichi Nakajima, Makoto Fukuoka, Anri Inaki, Ayane Nakamura, Daiki Kayano, Seigo Kinuya

Journal:

Annals of Nuclear Medicine

Year:

2011

Language:

english

File:

PDF, 479 KB

english, 2011

9

Coulomb blockade in Sb nanocrystals formed in thin, thermally grown SiO[sub 2] layers by low-energy ion implantation

Nakajima, Anri, Nakao, Hiroshi, Ueno, Hiroaki, Futatsugi, Toshiro, Yokoyama, Naoki

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 600 KB

english, 1998

10

Room temperature operation of Si single-electron memory with self-aligned floating dot gate

Nakajima, Anri, Futatsugi, Toshiro, Kosemura, Kinjiro, Fukano, Tetsu, Yokoyama, Naoki

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 407 KB

english, 1997

11

Self-limiting atomic-layer deposition of Si on SiO[sub 2] by alternate supply of Si[sub 2]H[sub 6] and SiCl[sub 4]

Yokoyama, Shin, Ohba, Kenji, Nakajima, Anri

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 311 KB

english, 2001

12

Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy

Hansch, Walter, Nakajima, Anri, Yokoyama, Shin

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 286 KB

english, 1999

13

Cotunneling current in Si single-electron transistor based on multiple islands

Ohkura, Kensaku, Kitade, Tetsuya, Nakajima, Anri

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 434 KB

english, 2006

14

Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires

Kawamura, Kensaku, Kidera, Toshirou, Nakajima, Anri, Yokoyama, Shin

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 729 KB

english, 2002

15

[IEEE 2007 Digest of papers Microprocesses and Nanotechnology - Kyoto, Japan (2007.11.5-2007.11.8)] 2007 Digest of papers Microprocesses and Nanotechnology - Si single-electron memory having in-plane dot with double gates

Fujiaki, Tomo, Ohkura, Kensaku, Nakajima, Anri

Year:

2007

Language:

english

File:

PDF, 837 KB

english, 2007

16

Si single electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

Nakajima, Anri, Futatsugi, Toshiro, Kosemura, Kinjiro, Fukano, Tetsu, Yokoyama, Naoki

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 396 KB

english, 1997

17

Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition

Nakajima, Anri, Yoshimoto, Takashi, Kidera, Toshirou, Yokoyama, Shin

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 327 KB

english, 2001

18

Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

Kitade, Tetsuya, Ohkura, Kensaku, Nakajima, Anri

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 389 KB

english, 2005

19

Atomic-layer deposition of ZrO[sub 2] with a Si nitride barrier layer

Nakajima, Anri, Kidera, Toshirou, Ishii, Hiroyuki, Yokoyama, Shin

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 372 KB

english, 2002

20

Biomolecule detection based on Si single-electron transistors for highly sensitive integrated sensors on a single chip

Kudo, Takashi, Nakajima, Anri

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 774 KB

english, 2012

21

Excellent retention characteristics of nanocomposite gate insulator consisting of fullerene-containing polystyrene

Nakajima, Anri, Fujii, Daiki, Uchino, Masatoshi

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.51 MB

english, 2013

22

Formation of Sn nanocrystals in thin SiO[sub 2] film using low-energy ion implantation

Nakajima, Anri, Futatsugi, Toshiro, Horiguchi, Naoto, Yokoyama, Naoki

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 516 KB

english, 1997

23

Charge redistribution in a charge storage layer containing C60 molecules and organic polymers for long electron retention

Nakajima, Anri, Uchino, Masatoshi

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 977 KB

english, 2012

24

Fabrication of Si single-electron transistors having double SiO[sub 2] barriers

Ito, Yuhei, Hatano, Tsuyoshi, Nakajima, Anri, Yokoyama, Shin

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 470 KB

english, 2002

25

High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps

Nakajima, Anri, Khosru, Quazi D. M., Yoshimoto, Takashi, Kasai, Tetsurou, Yokoyama, Shin

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 231 KB

english, 2003

26

Biomolecule detection based on Si single-electron transistors for practical use

Nakajima, Anri, Kudo, Takashi, Furuse, Sadaharu

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 1.58 MB

english, 2013

27

Periodic Coulomb oscillations in Si single-electron transistor based on multiple islands

Ohkura, Kensaku, Kitade, Tetsuya, Nakajima, Anri

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 530 KB

english, 2005

28

Highly sensitive ion detection using Si single-electron transistors

Kudo, Takashi, Nakajima, Anri

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 4.48 MB

english, 2011

29

Atomic-layer-deposited silicon-nitride/SiO[sub 2] stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Nakajima, Anri, Yoshimoto, Takashi, Kidera, Toshiro, Obata, Katsunori, Yokoyama, Shin, Sunami, Hideo, Hirose, Masataka

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 306 KB

english, 2000

30

NH[sub 3]-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability

Nakajima, Anri, Khosru, Quazi D. M., Yoshimoto, Takashi, Kidera, Toshirou, Yokoyama, Shin

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 301 KB

english, 2002

31

Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires

Yokoyama, Shin, Ohba, Kenji, Kawamura, Kensaku, Kidera, Toshiro, Nakajima, Anri

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 350 KB

english, 2001

32

Response to “Comment on ‘Reliable extraction of the energy distribution of Si/SiO[sub 2] interface traps in ultrathin metal–oxide–semiconductor structures’ ” [Appl. Phys. Lett. 81, 3681 (2002)]

Khosru, Quazi Deen Mohd, Nakajima, Anri, Yoshimoto, Takashi, Yokoyama, Shin

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 218 KB

english, 2002

33

Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO[sub 2] stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology

Khosru, Quazi Deen Mohd, Nakajima, Anri, Yoshimoto, Takashi, Yokoyama, Shin

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 238 KB

english, 2001

34

Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown SiO[sub 2] layers formed via low energy ion implantation

Nakajima, Anri, Futatsugi, Toshiro, Nakao, Hiroshi, Usuki, Tatsuya, Horiguchi, Naoto, Yokoyama, Naoki

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 743 KB

english, 1998

35

Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

Nakajima, Anri, Kudo, Takashi, Ito, Takashi

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 442 KB

english, 2011

36

Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions

Nakajima, Anri, Ito, Yuhei, Yokoyama, Shin

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 379 KB

english, 2002

37

Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics

Zhu, Shiyang, Nakajima, Anri

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 517 KB

english, 2007

38

Impact of floating dot distribution on memory characteristics of self-aligned dots-on-nanowire memory

Nakajima, Anri, Fujiaki, Tomo, Ezaki, Tatsuya

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 649 KB

english, 2009

39

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Bias Temperature Instability in MOSFETs with Atomic-Layer-Deposited Si-Nitride/SiO2 Stack Gate Dielectrics

Zhu, Shiyang, Nakajima, Anri, Ohashi, Takuo, Miyake, Hideharu

Year:

2006

Language:

english

File:

PDF, 100 KB

english, 2006

40

Optimization of attenuation and scatter corrections in sentinel lymph node scintigraphy using SPECT/CT systems

Yoneyama, Hiroto, Tsushima, Hiroyuki, Onoguchi, Masahisa, Konishi, Takahiro, Nakajima, Kenichi, Matsuo, Shinro, Kayano, Daiki, Wakabayashi, Hiroshi, Inaki, Anri, Kinuya, Seigo

Journal:

Annals of Nuclear Medicine

Year:

2015

Language:

english

File:

PDF, 1.43 MB

english, 2015

41

Memory operation mechanism of fullerene-containing polymer memory

Nakajima, Anri, Fujii, Daiki

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.05 MB

english, 2015

42

Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition

Nakajima, Anri, Sugita, Yoshihiro, Kawamura, Kazuo, Tomita, Hirofumi, Yokoyama, Naoki

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 952 KB

1996

43

Atomic Layer Deposition of HfO 2 and Si Nitride on Ge Substrates

Zhu, Shiyang, Nakajima, Anri

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 158 KB

english, 2007

44

Publisher's Note: “Excellent retention characteristics of nanocomposite gate insulator consisting of fullerene-containing polystyrene” [Appl. Phys. Lett. 103, 013302 (2013)]

Nakajima, Anri, Fujii, Daiki, Uchino, Masatoshi

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 382 KB

english, 2013

45

Characteristics of metal–oxide–semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation

Kudo, Takashi, Ito, Takashi, Nakajima, Anri

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 994 KB

english, 2013

46

Modified Direct-Current Current-Voltage Method for Interface Trap Density Extraction in Metal-Oxide-Semiconductor Field-Effect-Transistor with Tunneling Gate Dielectrics at High Temperature

Zhu, Shiyang, Nakajima, Anri, Ohashi, Takuo, Miyake, Hideharu

Journal:

Japanese Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 204 KB

english, 2005

47

In-Plane Grain Orientation Alignment of Polycrystalline Silicon Films by Normal and Oblique-Angle Ion Implantations

Nakajima, Anri, Kuroki, Shin-Ichiro, Fujii, Shuntaro, Ito, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 548 KB

english, 2012

48

Atomic Layer Deposition of HfO 2 Using Hf[N(C 2 H 5 ) 2 ] 4 and H 2 O

Yokoyama, Yuichi, Zhu, Shiyang, Nakajima, Anri

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 496 KB

english, 2006

49

Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors

Khosru, Quazi Deen Mohd, Yokoyama, Shin, Nakajima, Anri, Shibahara, Kentaro, Kikkawa, Takamaro, Sunami, Hideo, Yoshino, Takenobu

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 335 KB

english, 2003

50

Theoretical Analysis of Write Errors and Number of Stored Electrons for Ten-Nanoscale Si Floating-Dot Memory

Usuki, Tatsuya, Futatsugi, Toshiro, Nakajima, Anri

Journal:

Japanese Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 229 KB

english, 1998